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STLC3055Q

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STLC3055QTR

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STU3055NL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STUD3055L

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

T3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TIP3055

SILICONPOWERTRANSISTORS

PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto

COMSET

Comset Semiconductor

TIP3055

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TIP3055

SiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP3055

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
MUR
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ONSemiconductor
24+
TO223
400
询价
ONSemiconductor
2006
TO223
400
原装现货海量库存欢迎咨询
询价
NA
23+
TO223
4500
全新原装、诚信经营、公司现货销售!
询价
ON/安森美
23+
SOT-223
89630
当天发货全新原装现货
询价
RENESAS/瑞萨
22+
0805-12
37220
原装正品现货
询价
原装RENESAS
19+
0805-12
20000
原装现货假一罚十
询价
原装RENESAS
24+
0805-12
63200
一级代理/放心采购
询价
HITACHI
23+
SOD323
50000
全新原装正品现货,支持订货
询价
HITACHI
12+
SOD323
2850
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多RKP3055ETL供应商 更新时间2025-5-15 15:16:00