RJP60V0DPM

600V - 22A - IGBT Application: Inverter

Features ●Highbreakdown-voltage ●LowCollectortoEmittersaturationVoltage VCE(sat)=1.5Vtyp.(atIC=22A,VGE=15V,Ta=25°C) ●Shortcircuitwithstandtime(6styp.) ●Trenchgateandthinwafertechnology(G6Hseries)

RJP60V0DPM-80

600V - 22A - IGBT Application: Inverter

600V-22A-IGBTApplication:Inverter Features Highbreakdown-voltage Lowcollectortoemittersaturationvoltage VCE(sat)=1.5Vtyp.(atIC=22A,VGE=15V,Ta=25°C) Shortcircuitwithstandtime(6styp.) Trenchgateandthinwafertechnology(G6

RJP60V0DPM-80T2

600V - 22A - IGBT Application: Inverter

600V-22A-IGBTApplication:Inverter Features Highbreakdown-voltage Lowcollectortoemittersaturationvoltage VCE(sat)=1.5Vtyp.(atIC=22A,VGE=15V,Ta=25°C) Shortcircuitwithstandtime(6styp.) Trenchgateandthinwafertechnology(G6

RJP60V0DPM_15

600V - 22A - IGBT Application: Inverter

RJP60V0DPM-80_15

600V - 22A - IGBT Application: Inverter

RJP60V0DPM-00#T1

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 45A 40W TO-3PFM

Renesas Electronics America Inc

ACPDUC60V0Z-HF

SMDESDProtectionDiode

Features -Highcomponentdensity. -Surfacemountpackage. -Bi-directionalESDprotection. -Lowclampingvoltage. -Lowleakage. -AEC-Q101Qualified&PPAP.