Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.58 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：77 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：327.05 Kbytes 页数：2 Pages

ISC

无锡固电

600V - 11A - MOS FET High Speed Power Switching

文件：86.14 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.58 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：77 Kbytes 页数：4 Pages

RENESAS

瑞萨

600V - 11A - MOS FET High Speed Power Switching

文件：86.14 Kbytes 页数：7 Pages

RENESAS

瑞萨

600V - 11A - MOS FET High Speed Power Switching

文件：86.14 Kbytes 页数：7 Pages

RENESAS

瑞萨

600V - 11A - MOS FET High Speed Power Switching

文件：86.14 Kbytes 页数：7 Pages

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N-Channel 650V (D-S)Power MOSFET

文件：1.10601 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFETs

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