isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

Power MOSFET

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微碧半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

High Speed Power Switching

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400V - 3A - MOS FET High Speed Power Switching

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400V - 3A - MOS FET High Speed Power Switching

文件：82.53 Kbytes 页数：7 Pages

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400V - 3A - MOS FET High Speed Power Switching

文件：89.63 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 400V 3A 2900Mohm Mp-3A/To-252

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C)\n• Low drive current\n• High speed switching\n应用高端 BLDC 控制电风扇文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK4002DPD Data Sheet (400V - 3A - MOS FET / High Speed Power Switching)P;

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