Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching

文件：114.4 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance R DS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：172.55 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance R DS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

文件：172.55 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：106.54 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：209.66 Kbytes 页数：7 Pages

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200V - 45A - MOS FET High Speed Power Switching

文件：86.82 Kbytes 页数：7 Pages

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200V - 45A - MOS FET High Speed Power Switching

文件：86.82 Kbytes 页数：7 Pages

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Nch Single Power Mosfet 200V 45A 47Mohm To-220Fl

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C)\n• Low leakage current\n• High speed switching\n文档文档标题类型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語应用文档 2022年4月25日Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日RJK2017DPP-M0 DatasheetPDF80 KB;

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Silicon N Channel MOS FET High Speed Power Switching

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