首页 >RJK03C1DPB>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RJK03C1DPB | Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free 文件：268.92 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free 文件：268.92 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching 文件：277.93 Kbytes 页数：9 Pages | RENESAS 瑞萨 | RENESAS | ||
RJK03C1DPB | Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching | Renesas 瑞萨 | Renesas |
详细参数
- 型号：
RJK03C1DPB
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2447 |
SOT669 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT669 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Renesas |
22+ |
SC100 SOT669 |
9000 |
原厂渠道,现货配单 |
询价 | ||
RENESAS/瑞萨 |
23+ |
LFPAK |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
RENESAS/瑞萨 |
22+ |
LFPAK |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
Renesas Electronics America |
2022+ |
SC-100,SOT-669 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS/瑞萨 |
23+ |
LFPAK |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
24+ |
NA/ |
1239 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS |
23+ |
SOT669 |
1239 |
全新原装正品现货,支持订货 |
询价 |
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