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型号	下载订购	功能描述	制造商上传企业	LOGO
RJK0208DPA	文件：85.65 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：85.65 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0208DPA-00-J53	文件：85.65 Kbytes Page：7 Pages	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance • Pb-free • Halogen-free 文件：85.65 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0208DPA_13	文件：125.53 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：125.53 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0208DPA-00-J5A	文件：125.53 Kbytes Page：7 Pages	Built in SBD N Channel Power MOS FET High Speed Power Switching 文件：125.53 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJK0208DPA	文件：300 bytes Page：1 Pages	25V, 65A, 2.0mΩ max. Built in SBD N Channel Power MOS FET High Speed Power Switching  High speed switching\n Capable of 4.5 V gate drive\n Low drive current\n High density mounting\n Low on-resistance\n Pb-free\n Halogen-free;	Renesas 瑞萨	Renesas

型号：
RJK0208DPA
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

更多RJK0208DPA供应商更新时间2025-12-11 11:00:00