600V - 30A - IGBT Application:Current resonance circuit

Features • Optimized for current resonance application • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 45 ns typ. (at V

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IGBT 600V 60A TO-247A Built-In FRD

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website. • Optimized for current resonance application\n• Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)\n• Built in fast recovery diode in one package\n• Trench gate and thin wafer technology\n• High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VG;

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600V - 30A - IGBT Application:Current resonance circuit

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Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 600V 60A TO247A

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