RJH60T04DPQ-A1数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

特性 Features

• Optimized for current resonance application
• Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
• Low tail loss Etail = 160 μJ typ. (at VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)

应用 Application

• 多功能智能高压锅