RJH60F7DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,

RJH60F7DPQ-A0

IGBTs;

RJH60F7DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,

RJH60F7DPQ-A0_15

600 V - 50 A - IGBT High Speed Power Switching

RJH60F7DPQ-A0#T0

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 90A 328.9W TO247A

Renesas Electronics America Inc