RJF0610DSP中文资料60V, 1.5A Silicon N channel Thermal FET Power Switching数据手册Renesas规格书

描述 Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性 Features

• Logic level operation (5 to 6 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Temperature hysteresis type.
• High density mounting
• Power supply voltage applies 12 V and 24 V.