RJF0608JSP中文资料Nch Power MOSFETs数据手册Renesas规格书

描述 Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

特性 Features

• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• High density mounting
• Power supply voltage applies 12 V and 24 V.
• AEC-Q101 Compliant