RJE0617JSP数据手册集成电路（IC）的配电开关负载驱动器规格书PDF

描述 Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性 Features

• Logic level operation (3 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Hysteresis type shut down operation.
• High density mounting.
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V.
• AEC-Q101compliant.