RJE0607JSP数据手册集成电路（IC）的配电开关负载驱动器规格书PDF

描述 Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性 Features

• High endurance capability against to the short circuit.
• Built-in the over temperature shut-down circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Low on-resistance RDS(on) : 140 mΩ Typ, 260 mΩ Max (VGS = –10 V)
• High density mounting
• AEC-Q101 Compliant