RJE0605JPD中文资料Silicon P Channel MOS FET Series Power Switching数据手册Renesas规格书

描述 Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性 Features

• Logic level operation (–6 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Low on-resistance RDS(on) : 58 mΩ Typ, 75 mΩ Max (VGS = –10 V)
• AEC-Q101 Compliant