首页 >RHR460>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
7.5mmWidth4-PinSmallOutlinePackage Features 7.5mmWidth4-PinSmallOutlinePackage Creepage>8mm HighInput-to-OutputIsolation(5kVRMSMIN) CTRRange:50%-600% HighCollector-EmitterVoltage(VCE=70VMIN) LongLife/HighReliability RoHS/Pb-Free/REACHCompliant Applications HomeApplia | SOLIDSTATE Solid State Inc | SOLIDSTATE | ||
ULTRAFASTPLASTICRECTIFIER | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | SMC | ||
SDUR460ULTRAFASTRECTIFIER Applications Antiparalleldiodeforhighfrequency switchingdevices Antisaturationdiode Snubberdiode Freewheelingdiodeinconvertersand motorcontrolcircuits Rectifiersinswitchmodepowersupplies(SMPS) Inductiveheatingandmelting Uninterruptiblepowersupplies(UPS) Ultraso | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 | SMCDIODE | ||
ULTRAFASTPLASTICRECTIFIER | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | SMC | ||
SDUR460AULTRAFASTRECTIFIER Applications Antiparalleldiodeforhighfrequency switchingdevices Antisaturationdiode Snubberdiode Freewheelingdiodeinconvertersand motorcontrolcircuits Rectifiersinswitchmodepowersupplies(SMPS) Inductiveheatingandmelting Uninterruptiblepowersupplies(UPS) Ultraso | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 | SMCDIODE | ||
GaAlAs-Lumineszenzdiode GaAlAsInfraredEmitter Features •Fabricatedinaliquidphaseepitaxyprocess •Cathodeiselectricallyconnectedtothecase •Highreliability •MatchesallSi-Photodetectors •Hermeticallysealedpackage •SamepackageasSFH216,SFH400andFH480 Applications | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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