GaAlAs-Lumineszenzdiode

GaAlAs Infrared Emitter Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors • Hermetically sealed package • Same package as SFH 216, SFH 400 and FH 480 Applications

文件：97.27 Kbytes 页数：5 Pages

OSRAM

艾迈斯欧司朗

Engwinklige LED im MIDLED-Gehause Narrow beam LED in MIDLED package Lead (Pb) Free Product - RoHS Compliant

Narrow beam LED inMIDLED package Features • High Power GaAs-LED (35 mW) with typical peak wavelength of 950 nm • Narrow halfangle (± 20°) • Low profile component • Usable as top-looking and side-looking device •SFH 4600: Taping as Toplooker SFH 4605: Taping as Sidelooker

文件：236.9 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

Engwinklige LED im MIDLED-Gehause Narrow beam LED in MIDLED package Lead (Pb) Free Product - RoHS Compliant

Narrow beam LED inMIDLED package Features • High Power GaAs-LED (35 mW) with typical peak wavelength of 950 nm • Narrow halfangle (± 20°) • Low profile component • Usable as top-looking and side-looking device •SFH 4600: Taping as Toplooker SFH 4605: Taping as Sidelooker

文件：236.9 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：135.66 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：169.48 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：144.68 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司