GaAlAs-Lumineszenzdiode (660 nm)

Features: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Spectral match with silicon photodetectors • Hermetically sealed package Applications • Photointerrupters • IR remote control • Sensor technology • Light curtains

文件：149.28 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Features ● Radiation without IR in the visible red range ● Cathode is electrically connected to the case ● Very high efficiency ● High reliability ● Short switching time Applications ● Photointerrupters ● Hermetically sealed package

文件：42.22 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAlAs Light Emitting Diode

文件：223.73 Kbytes 页数：9 Pages

OSRAM

艾迈斯欧司朗

GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Infineon

英飞凌

GaAlAs Light Emitting Diode

文件：223.73 Kbytes 页数：9 Pages

OSRAM

艾迈斯欧司朗