GaAlAs Light Emitting Diode (660 nm)

Features: • Radiation without IR in the visible red range • Cathode is electrically connected to the case • High reliability • Short switching times • Same package as BP 103, LD 242 • DIN humidity category in acc. with DIN 40 040 GQG Applications • Photointerrupters • Fiber optic transmis

文件：172.98 Kbytes 页数：10 Pages

OSRAM

艾迈斯欧司朗

GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Features ● Radiation without IR in the visible red range ● Cathode is electrically connected to the case ● Very high efficiency ● High reliability ● Short switching time ● Same package as BP 103, LD 242 ● DIN humidity category in acc. with DIN 40040 GQG ● Component subjected to aperture me

文件：40.7 Kbytes 页数：5 Pages

SIEMENS

西门子

OSRAMOPTO

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DIP-2

OSRAM

艾迈斯欧司朗

上传：深圳市神舟芯电子科技有限公司

光电开关

OSRAM

艾迈斯欧司朗

上传：深圳市神舟芯电子科技有限公司