SI1016CX

ComplementaryN-andP-Channel20V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFETs •High-sideswitching •Easeindrivingswitches •Lowoffset(error)voltage •Low-voltageoperation •High-speedcircuits •TypicalESDprotection: n-channel900V,p-channel900V(HBM) •100Rgtested •Materialcategorization:fordefinitionsof

SI1016X

ComplementaryN-andP-Channel20-V(D-S)MOSFET

SI1016X

ComplementaryNandP-Channel20-V(D-S)MOSFET

Si1016X

ComplementaryN-andP-Channel20-V(D-S)MOSFET

SI1016X

ComplementaryN-andP-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFETs •2000VESDProtection •VerySmallFootprint •High-SideSwitching •LowOn-Resistance: N-Channel,0.7 P-Channel,1.2 •LowThreshold:±0.8V(Typ.) •FastSwitchingSpeed:14ns •1.8VOp

SLA1016

100MHz,200MHzbandwidthmodels

SML1016

5phiRoundStandardBicolorLED

BicolorLEDs

SML1016

5phiRoundStandardBicolorLEDs

SPC1016

N&PPairEnhancementModeMOSFET

SRF-1016

65-300MHzSiliconGermaniumIFReceiver

ProductDescription TheSirenzaMicrodevices’SRF-1016isaquadraturedemodulatorRFICdesignedforUHFandmicrowavereceiverIFapplications.Thisdevicefeaturesswitchablegaincontrol,highP1dB,andexcellentI/Qamplitudeandphasebalance. ProductFeatures •AvailableinLeadFree,RoH