Ultra fast Rectifier

FEATURES • High junction temperature capability • Low forward voltage • High current capability • Low power loss, high efficiency • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching power supply • Free-Wheeling diodes • Reverse

文件：243.57 Kbytes 页数：2 Pages

ISC

无锡固电

Hyperfast Diode

FEATURES ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration

文件：372.21 Kbytes 页数：2 Pages

ISC

无锡固电

30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode

GENERAL DESCRIPTION RHRG30120 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability

文件：1.742 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

文件：74.82 Kbytes 页数：4 Pages

Fairchild

仙童半导体

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

文件：31.8 Kbytes 页数：3 Pages

Intersil

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.\nThis device is intended for use as a freewheeling/clamping diode and rectifier in a • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <65ns\n• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175°C\n• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V\n• Avalanche Energy Rated\n• Planar ConstructionApplications\n• Switchin;

Renesas

瑞萨

30A，1200V，极快速二极管

RHRG30120 是一款具有软恢复特性的超高速二极管。它采用氮化硅钝化离子布植外延平面结构，其恢复时间仅为超快速二极管恢复时间的一半。这些器件主要是在各种开关电源及其他电源开关应用中用作续流/箝位二极管。其低存储电荷和超高速软恢复特性可最大程度降低多种电源开关电路中的振铃和电气噪声，由此降低开关晶体管中的功耗。 •超高速恢复，Trr = 85 ns（需 IF= 30 A）\n•最大正向电压，VF = 3.2 V（需 TC = 25°C）\n•1200 V 反向电压和高可靠性\n•雪崩能量额定值\n•符合RoHS标准;

ONSEMI

安森美半导体

Ultrafast Soft Recovery Diode,1200V,30A

MINOS

迈诺斯

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1200V 30A TO247-2

ONSEMI

安森美半导体

30A, 1200V Hyperfast Dual Diode

The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics (trr

文件：32.68 Kbytes 页数：3 Pages

Intersil