RGTV80TS65

丝印：RGTV80TS65；Package：TO-247N；650V 40A Field Stop Trench IGBT

Features 1)LowCollector-EmitterSaturationVoltage 2)HighSpeedSwitching&LowSwitchingLoss 3)ShortCircuitWithstandTime2μs 4)Pb-freeLeadPlating;RoHSCompliant Application SolarInverter UPS Welding IH PFC

RGTV80TS65D

丝印：RGTV80TS65D；Package：TO-247N；650V 40A Field Stop Trench IGBT

Features 1)LowCollector-EmitterSaturationVoltage 2)HighSpeedSwitching&LowSwitchingLoss 3)ShortCircuitWithstandTime2μs 4)BuiltinVeryFast&SoftRecoveryFRD 5)Pb-freeLeadPlating;RoHSCompliant Application SolarInverter UPS Welding IH PFC

RGTV80TS65D

短路耐量 2µs, 650V 40A,内置快速反向恢复二极管, TO-247N,沟槽式场截止型 IGBT

RGTV80TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。RGTV系列的短路耐量为2μs (Min)，同时还具有开关损耗小，开关速度快的特点。; • Low Collector - Emitter Saturation Voltage\n• High Speed Switching & Low Switching Loss\n• Short Circuit Withstand Time 2μs\n• Built in Very Fast & Soft Recovery FRD\n• Pb - free Lead Plating ; RoHS Compliant\n;

RGTV80TS65DGC11

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor

RGTV80TS65GC11

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor