丝印：RFQ5020A；Package：SOIC；REF50xxA-Q1 Low-Noise, Very Low Drift, Precision Voltage Reference

1 Features 1• Qualified for Automotive Applications • Low Temperature Drift – Standard Grade: 8 ppm/°C (max) • High Accuracy – Standard Grade: 0.1% (max) • Low Noise: 3 μVPP/V • Excellent Long-Term Stability: – 5 ppm/1000 hr (typ) after 1000 hours • High Output Current: ±10 mA • Temp

文件：851.3 Kbytes 页数：26 Pages

TI

德州仪器

丝印：RFQ5020A；Package：SOIC；REF50xxA-Q1 Low-Noise, Very Low Drift, Precision Voltage Reference

1 Features 1• Qualified for Automotive Applications • Low Temperature Drift – Standard Grade: 8 ppm/°C (max) • High Accuracy – Standard Grade: 0.1% (max) • Low Noise: 3 μVPP/V • Excellent Long-Term Stability: – 5 ppm/1000 hr (typ) after 1000 hours • High Output Current: ±10 mA • Temp

文件：851.3 Kbytes 页数：26 Pages

TI

德州仪器

Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.118Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：297.01 Kbytes 页数：2 Pages

ISC

无锡固电