丝印：RFQ5020A；Package：SOIC；REF50xxA-Q1 Low-Noise, Very Low Drift, Precision Voltage Reference

1 Features 1• Qualified for Automotive Applications • Low Temperature Drift – Standard Grade: 8 ppm/°C (max) • High Accuracy – Standard Grade: 0.1% (max) • Low Noise: 3 μVPP/V • Excellent Long-Term Stability: – 5 ppm/1000 hr (typ) after 1000 hours • High Output Current: ±10 mA • Temp

文件：851.3 Kbytes 页数：26 Pages

TI

德州仪器

丝印：RFQ5020A；Package：SOIC；REF50xxA-Q1 Low-Noise, Very Low Drift, Precision Voltage Reference

1 Features 1• Qualified for Automotive Applications • Low Temperature Drift – Standard Grade: 8 ppm/°C (max) • High Accuracy – Standard Grade: 0.1% (max) • Low Noise: 3 μVPP/V • Excellent Long-Term Stability: – 5 ppm/1000 hr (typ) after 1000 hours • High Output Current: ±10 mA • Temp

文件：851.3 Kbytes 页数：26 Pages

TI

德州仪器

Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features ● Low on-resistance ● Low leakage current ● High speed switching

文件：107.03 Kbytes 页数：7 Pages

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Silicon N Channel MOSFET High Speed Power Switching

文件：74.99 Kbytes 页数：4 Pages

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