SFT2014

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30µVRMSTYP(10Hzto100kHz) -Ul

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz •

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1.