12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These

文件：40.37 Kbytes 页数：5 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.25 Kbytes 页数：2 Pages

ISC

无锡固电

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：31.37 Kbytes 页数：4 Pages

INTERSIL

Sales Outline Drawing

文件：100.75 Kbytes 页数：1 Pages

MSPI

马洛里

May not be suitable for all medical and aerospace applications

Oscillation Frequency (Hz) 3500 ± 500

文件：100.08 Kbytes 页数：1 Pages

MSPI

马洛里

350V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：464.23 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体