2.4GHz to 2.5GHz 802.11b/g/n WiFi Front End Module

文件：241.58 Kbytes 页数：8 Pages

RFMD

威讯联合

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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POLYFET

Switching Type(Self Oscillation Type with Coil)

文件：64.53 Kbytes 页数：6 Pages

SANKEN

三垦

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

文件：339.03 Kbytes 页数：7 Pages

TOSHIBA

东芝