RF3L05250CB4

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

The RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.\n\n; • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate/source voltage range for improved class C operation \n• In compliance with the European Directive 2002/95/EC;

RF3L05250CB4

250 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

Features •Highefficiencyandlineargainoperations •IntegratedESDprotection •Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation •IncompliancewiththeEuropeandirective2002/95/EC Description TheRF3L05250CB4isa250W,28/32V,LDMOSFETdesig

RF3L05250CB4

Package：LBB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：250 W 28/32 V RF POWER LDMOS TRA

RF430F5144CIRKVRQ1

TI
VQFN48

RF430F5144CIRKVRQ1

TI
VQFN48