RF3L05250CB4中文资料250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz数据手册ST规格书

描述 Description

The RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.

特性 Features

• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range for improved class C operation
• In compliance with the European Directive 2002/95/EC

简介

RF3L05250CB4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的RF3L05250CB4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。