RF2L36075CF2中文资料75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor数据手册ST规格书

描述 Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.

特性 Features

• High efficiency and linear gain operations
• Integrated ESD protection
• Internal input matching for ease of use
• Large positive and negative gate-source voltage range for improved class C operation
• Excellent thermal stability, low HCI drift
• In compliance with the european directive 2002/95/EC

简介

RF2L36075CF2属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的RF2L36075CF2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。