75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internal input matching for ease of use \n• Large positive and negative gate-source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directive;

ST

意法半导体

75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european d

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STMICROELECTRONICS

意法半导体

Package：B2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：75 W, 28 V, 3.1 TO 3.6 GHZ RF PO

STMICROELECTRONICS

意法半导体

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)