200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

Features High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Description The RF2L1

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STMICROELECTRONICS

意法半导体

200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directive 2002/95/EC;

ST

意法半导体

RFID 应答器

TI

德州仪器

上传：深圳市诺美思科技有限公司

sop8

RFMD

威讯联合

上传：深圳市莱克讯科技有限公司

sop8

RFMD

威讯联合

上传：深圳市昊创电子有限公司