LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

文件：110.65 Kbytes 页数：6 Pages

RFMD

威讯联合

40V N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON)

文件：2.09106 Mbytes 页数：6 Pages

UMW

友台半导体

SOT-23-3L Plastic-Encapsulate MOSFETS

Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON)

文件：1.82855 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

N-Channel 40 V (D-S) MOSFET

文件：239.06 Kbytes 页数：10 Pages

TFUNK

威世