GENERAL PURPOSE AMPLIFIER

Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF

文件：61.81 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Qorvo

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF

文件：61.81 Kbytes 页数：6 Pages

RFMD

威讯联合

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1310, RN1311

文件：163.47 Kbytes 页数：5 Pages

TOSHIBA

东芝

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes 页数：2 Pages

RECOM

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes 页数：2 Pages

RECOM