GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Qorvo

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合

N-Channel 30V (D-S) MOSFET , ESD Protected

FEATURES RDS(ON)

文件：539.58 Kbytes 页数：7 Pages

RECTRON

丽正

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

文件：261.5 Kbytes 页数：7 Pages

TOSHIBA

东芝

1 Watt SMD Miniature Isolated Single Output

文件：89.09 Kbytes 页数：2 Pages

RECOM