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RF1S22N10SM中文资料PDF规格书
RF1S22N10SM规格书详情
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Features
• 22A, 100V
• rDS(ON) = 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175°C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号:
RF1S22N10SM
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VBsemi |
2202+ |
TO263 |
5807 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
HARRIS(哈利斯) |
23+ |
TO263AB |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INTERSIL |
2048+ |
TO-263 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
VBsemi/台湾微碧 |
TO-252 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
HAR |
23+ |
RF1S23N06LE |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
INTERSIL |
23+ |
65480 |
询价 | ||||
INTERSIL/FSC |
23+ |
TO-263 |
28610 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |