RF1K49154中文资料仙童半导体数据手册PDF规格书

This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. These devices can be operated directly from integrated circuits.

特性 Features

• 2A, 60V

• rDS(ON) = 0.130Ω

• Temperature Compensating PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”