RF1K49092中文资料INTERSIL数据手册PDF规格书

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

特性 Features

• 3.5A, 12V (N-Channel) 2.5A, 12V (P-Channel)

• rDS(ON) = 0.050Ω (N-Channel) rDS(ON) = 0.130Ω (P-Channel)

• Temperature Compensating PSPICE® Model

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”