3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET??Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switchi

文件：459.01 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET??Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switchi

文件：248.06 Kbytes 页数：13 Pages

Intersil

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET

ONSEMI

安森美半导体

ROHM
SOD106

ROHM

罗姆

上传：深圳市凯斯宇科技有限公司

RFMD
QFN32

RFMD

威讯联合

上传：深圳市旺财半导体有限公司