2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in application

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6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

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6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

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6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET??Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

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6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET??Enhancement Mode Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

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7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET??Power MOSFET

The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications su

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7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET??Power MOSFET

The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications su

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2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET??Power MOSFET

The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

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2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET

The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

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2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET

The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

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