ZDT717

DUALPNPMEDIUMPOWERHIGHGAINTRANSISTORS

SM-8DUALPNPMEDIUMPOWERHIGHGAINTRANSISTORS

ZTB717E

CERAMICRESONATORS

ZTBSERIES700kHzto999kHz

ZUMT717

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *500mWPOWERDISSIPATION *ICCONT1.5A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpTo3A(pulsed) *ExtremelyLowSaturationVoltage *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *NegativeboostfunctionsinDC-DCconverters *Supplylineswitc

ZUMT717

Super323횚SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO>-12V •IC=-1.25AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltageVCE(sat)

ZXTD717MC

DUAL12VPNPLOWSATURATIONTRANSISTORS

ZXTD717MCTA

DUAL12VPNPLOWSATURATIONTRANSISTORS

ZXTP717MA

12VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=60mΩforalowequivalentOn-Resistance •hFEspecifiedupto-10Aforahighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA

ZXTP717MATA

12VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=60mΩforalowequivalentOn-Resistance •hFEspecifiedupto-10Aforahighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA

ZXTPS717MC

12VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=65mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-10Aforhighcurrentgainholdup SchottkyDiode •BVR>40V

ZXTPS717MCTA

12VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=65mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-10Aforhighcurrentgainholdup SchottkyDiode •BVR>40V