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型号	下载订购	功能描述	制造商上传企业	LOGO
RDX100N60	文件：61.73 Kbytes Page：3 Pages	10V Drive Nch MOS FET 文件：61.73 Kbytes 页数：3 Pages	ROHM 罗姆	ROHM
RDX100N60	文件：300 bytes Page：1 Pages	10V Drive Nch MOS FET	ROHM 罗姆	ROHM
RM100N60DF	文件：158.88 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON) 文件：158.88 Kbytes 页数：6 Pages	RECTRON 丽正国际	RECTRON
RM100N60DFV	文件：224.17 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON) 文件：224.17 Kbytes 页数：6 Pages	RECTRON 丽正国际	RECTRON
RM100N60HD	文件：493.23 Kbytes Page：7 Pages	N-Channel Enhancement Mode Power MOSFET Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON) 文件：493.23 Kbytes 页数：7 Pages	RECTRON 丽正国际	RECTRON

更多RDX100N60供应商更新时间2025-12-24 11:00:00