RD3N06BAT

Marking：RD3N06BAT；Package：TO-252；Pch -80V -60A Power MOSFET

Features 1)Lowon-resistance 2)Highpowerpackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree 5)100%RgandUIStested Application Switching Motordrives

ADM3N06B

N-ChannelEnhancementModeFieldEffectTransistor

LMTL3N06

60VN-ChannelEnhancementModeMOSFET

MMDF3N06HD

DUALTMOSPOWERMOSFET60VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors DualHDTMOSareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.TheseminiaturesurfacemountMOSFETsfeaturelowRDS(on)andtruelogiclevelperformance.DualHDTMOSde

MMDF3N06HD

N?묬hannelSO??,DualPowerMOSFET

MMDF3N06VL

PowerMOSFET3Amps,60VoltsN?묬hannelSO??,Dual

UT3N06

N-CHANNELENHANCEMENTMODEPOWERMOSFET

UT3N06

N-CHANNELENHANCEMENTMODEPOWERMOSFET

UT3N06-Q

3.0A,60VN-CHANNELPOWER

DESCRIPTION TheUTCUT3N06isanN-channelpowerMOSFETproviding verylowon-resistance.Ithashighefficiencyandperfect cost-effectiveness.Itcanbegenerallyappliedinthecommercial andindustrialfields. FEATURES *RDS(ON)≤110mΩ@VGS=10V,ID=3.0A RDS(ON)≤150mΩ@VGS