3.0A, 60V N-CHANNEL POWER

 DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 110 mΩ @ VGS=10V, ID=3.0A RDS(ON) ≤ 150 mΩ @ VGS

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UTC

友顺

Trench Power MOSFET  (N-CH)

UTC

友顺

N -C hannel E nhancem ent M ode Field E ffect Transistor

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ADV

爱德微

60V N-Channel Enhancement Mode MOSFET

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LEIDITECH

雷卯电子

DUAL TMOS POWER MOSFET 60 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS de

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Motorola

摩托罗拉