丝印：RD3N03BAT；Package：TO-252；Pch -80V -30A Power MOSFET

Features 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested Application Switching Motor drives

文件：2.55365 Mbytes 页数：14 Pages

ROHM

罗姆

Pch -80V -30A, TO-252 (DPAK), Power MOSFET

RD3N03BAT is a power MOSFET with low-on resistance and high power package, suitable for Switching and Motor drives applications. • Low on - resistance\n• High power package (TO-252)\n• Pb-free plating ; RoHS compliant\n• Halogen free\n• 100% Rg and UIS tested;

ROHM

罗姆

3.5A, 30V, RDS(ON) 55 m
(ohm) Dual-N Enhancement Mode MOSFET

文件：343.79 Kbytes 页数：4 Pages

SECOS

喜可士

DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. Th

文件：281.67 Kbytes 页数：10 Pages

Motorola

摩托罗拉

Power MOSFET 3 Amps, 30 Volts

文件：118.88 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

Plastic Power Transistors SO–8 for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 100 Vdc (Min) @ IC = 1.0 Adc =

文件：122.92 Kbytes 页数：4 Pages

Motorola

摩托罗拉