RD3N03BAT

Marking：RD3N03BAT；Package：TO-252；Pch -80V -30A Power MOSFET

Features 1)Lowon-resistance 2)Highpowerpackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree 5)100%RgandUIStested Application Switching Motordrives

MMDF3N03HD

DUALTMOSPOWERMOSFET4.1AMPERES30VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Th

MMDF3N03HD

PowerMOSFET3Amps,30Volts

MMDJ3N03BJT

DUALBIPOLARPOWERTRANSISTORNPNSILICON30VOLTS3AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =100Vdc(Min)@IC=1.0Adc =

MMDJ3N03BJT

PlasticPowerTransistorsSO??forSurfaceMountApplications

MTSF3N03HD

PowerMOSFET

MTSF3N03HD

SINGLETMOSPOWERMOSFET3.8AMPERES30VOLTSRDS(on)=0.040OHM

MediumPowerSurfaceMountProducts TMOSSingleN-ChannelFieldEffectTransistor Micro8devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighener

SDT3N03

3.5A,30V,RDS(ON)55m
(ohm)Dual-NEnhancementModeMOSFET