500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

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NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

文件：95.2 Kbytes 页数：12 Pages

NEC

瑞萨

ZENER DIODES

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：49.47 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FET type transistor specifically designed for HF High power amplifiers applications.

DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60typ.on HF Band APPLICATION For output stage of high power amplifie

文件：179.13 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

文件：54.8 Kbytes 页数：12 Pages

NEC

瑞萨

Bidirectional Active USB-C™ Cable for USB3.2 (10G) and DP1.3 (8.1G)

Features  Bidirectional active USB-C cable carrying 4L DP or 2L DP and USB3.2 - Supports up to 4L of DisplayPort in/out, with signal conditioning up to 8.1Gbps (supports HBR3, HBR2, HBR, RBR rates) - Supports USB3.1 in/out, with signal conditioning up to 10Gbps - Supports USB2.0 (480Mbps) -

文件：289.9 Kbytes 页数：2 Pages

ANALOGIX

硅谷数模

500 mW PLANAR TYPE SILICON ZENER DIODES

The RD2.0E to RD120E are zener diodes with an allowable dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure. FEATURES • The zener voltage series has a wide voltage range of 2 V to 120 V and is ideal for standardization. • The E24 series is employed for the

文件：346.09 Kbytes 页数：5 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司