10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching

文件：1.17105 Mbytes 页数：7 Pages

ROHM

罗姆

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：1.00833 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Valiance RCD White Fused Connection Unit - Passive

• Provides additional protection against the dangers of electrocution. • Eliminates the need for plug-in residual current circuit breakers. • Protects appliances from possible fire hazard. • Extra fast action – trips out within 40 milliseconds (BS7288). • Latching for continuous operation afte

文件：70.88 Kbytes 页数：1 Pages

TIMEGUARD

Safety / Valiance RCD Protection

Features & Benefits New Dual Flag Technology provides added protection against the risks of electrocution High EMC Immunity dramatically reduces nuisance tripping Conforms to BS7288:2016 BS1363-2, and meets latest IET Wiring Regulations Continues to protect with Lost Neutral /pulsating DC

文件：580.84 Kbytes 页数：3 Pages

TIMEGUARD

N-Channel MOSFET uses advanced trench technology

文件：1.14995 Mbytes 页数：5 Pages

DOINGTER

杜因特

Nch 190V 10A Power MOSFET

文件：791.23 Kbytes 页数：14 Pages

ROHM

罗姆

1A,800V, Surface Mount Standard Recovery Rectifiers

Galaxy

银河微电

10V Drive Nch MOSFET

•10V驱动型 Nch 功率MOSFET;

ROHM

罗姆

DIP 1-100W,DC/DC 电源转换器

• 10W调节，3000VDC隔离\n• 内置EMIA类滤波器\n• 标准1.00x1.00x0.39英寸;

P-DUKE

強茂