首页 >RC951F/R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Input/OutputRail-to-RailLowPowerOperationalAmplifier | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Input/outputrail-to-raillowpoweroperationalamplifier | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
safetyswitchXCSPR-spindle30mm-2NC1NO-Pg11 | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER | ||
CERAMICRESONATORS ZTBSERIES700kHzto999kHz | EUROQUARTZEUROQUARTZ limited 石英公司欧洲石英公司 | EUROQUARTZ | ||
PNPSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR PNPSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR *4Ampscontinuouscurrent *Upto15Ampspeakcurrent *Verylowsaturationvoltage *Excellentgainupto10Amps *Spicemodelavailable | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
GateDriver Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan | POWEREX Powerex Power Semiconductors | POWEREX | ||
PNPSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR PNPSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR *4Ampscontinuouscurrent *Upto15Ampspeakcurrent *Verylowsaturationvoltage *Excellentgainupto10Amps *Spicemodelavailable | Zetex Zetex Semiconductors | Zetex | ||
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORIND-PAK DESCRIPTION PackagedintheD-PAKoutlinethishighcurrenthighperformance60VPNPtransistorofferslowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •6ampscontinuouscurrent •Upto15ampspeakcurrent •Lowequi | Zetex Zetex Semiconductors | Zetex | ||
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORIND-PAK Features •BVCEO>-60V •RSAT=53mΩTypical •ContinuousCollectorCurrentIC=-6A •Upto15APeakCurrent •LowEquivalentOnResistance •LowSaturationVoltage •HighGainHoldsUp(100min@2A) •Lead-FreeFinish;RoHScompliant(Note1&2) •HalogenandAntimonyFree.“Gre | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-60V •RSAT=53mΩTypical •ContinuousCollectorCurrentIC=-6A •Upto-15APeakCurrent •LowEquivalentOnResistance •LowSaturationVolt | DIODESDiodes Incorporated 美台半导体 | DIODES |
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