丝印：R80；WE-HCM SMT High Current Flat Wire Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：442.23 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R8003KND3；Package：TO-252；Nch 800V 3A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.49909 Mbytes 页数：14 Pages

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丝印：R8011KNZ4；Package：TO-247G；Nch 800V 11A Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant Application Switching

文件：2.38728 Mbytes 页数：14 Pages

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丝印：R8019KNZ4；Package：TO-247G；Nch 800V 19A Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant Application Switching

文件：2.58724 Mbytes 页数：14 Pages

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丝印：R80XX；Package：SOT-23-6；Microprocessor Supervisory Circuit with Programmable Delay Time

GENERAL DESCRIPTION The SGM836 family can monitor system voltages from 0.4V to 5V. When the detection voltage falls below the preset threshold (VITL) or the manual reset (nMR) pin is driven low, the open-drain nRESET output is asserted. After the detection voltage and nMR voltage return higher th

文件：898.25 Kbytes 页数：16 Pages

SGMICROSG Micro Corp

圣邦股份圣邦微电子（北京）股份有限公司

丝印：R8001CND3；Package：TO-252；Nch 800V 1A Power MOSFET

文件：2.44241 Mbytes 页数：14 Pages

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丝印：R8002ANJ；Package：TO-263S；Nch 800V 2A Power MOSFET

文件：1.55162 Mbytes 页数：14 Pages

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丝印：R8002CND3；Package：TO-252；Nch 800V 2A Power MOSFET

文件：1.33921 Mbytes 页数：14 Pages

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丝印：R8002KND3；Package：TO-252；Nch 800V 1.6A Power MOSFET

文件：2.24323 Mbytes 页数：14 Pages

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丝印：R8002KNX；Package：TO-220FM；Nch 800V 1.6A Power MOSFET

文件：2.35862 Mbytes 页数：14 Pages

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