丝印：R8003KND3；Package：TO-252；Nch 800V 3A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.49909 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：R8003KND3；Package：TO-252；Nch 800V 3A Power MOSFET

lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication Switching

文件：1.49909 Mbytes 页数：14 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：300.01 Kbytes 页数：2 Pages

ISC

无锡固电