N-Channel 650 V (D-S) MOSFET

文件：1.03795 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

10V Drive Nch MOSFET

文件：297.12 Kbytes 页数：6 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：350.21 Kbytes 页数：2 Pages

ISC

无锡固电

600V - 6A - IGBT Power Switching

Features  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) =1.8 V typ. (at IC = 20 A, VGE = 15V, Tc = 25 C)  Quality grade: Standard  High speed switching  Applications: PFC

文件：188.26 Kbytes 页数：12 Pages

RENESAS

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